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Journal Article DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
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Authors
Hyung Sup Yoon, Byoung Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Sung Il Kim, Chul Won Ju, Hae Cheon Kim, Jong Won Lim
Issue Date
2015-08
Citation
Journal of the Korean Physical Society, v.67, no.4, pp.654-657
ISSN
0374-4884
Publisher
한국물리학회
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.67.654
Project Code
15MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations, Jong-Won Lim
Abstract
We fabricated a 0.17-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC recessed by using ICP gate etching with a gas mixture of BCl3/Cl2. The ICP gate recess process exhibited an etch rate of 20 nm/min for the AlGaN layer and the clean surface characteristics at the etched AlGaN/gate metal interface for the AlGaN/GaN HEMT devices. The recessed 0.17 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a high gateto-drain breakdown voltage of -177 V, a good Schottky diode ideality factor of 1.32, an extrinsic transconductance (gm) of 245 mS/mm, and a threshold voltage (Vth) of -2.6 V. The recessed 0.17 μm × 200 μm AlGaN/GaN HEMT devices also exhibited high RF performance, having a cut-off frequency (fT) of 46 GHz and a maximum oscillation frequency (fmax) of 150 GHz.
KSP Keywords
20 nm, 6 GHz, AlGaN/GaN HEMTs, Breakdown voltage(BDV), DC Characteristics, Diode ideality factor, Etch rates, GaN HEMT devices, Gas mixture, Gate recess, High electron mobility transistor(HEMT)