15MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations,
Jong-Won Lim
Abstract
We fabricated a 0.17-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC recessed by using ICP gate etching with a gas mixture of BCl3/Cl2. The ICP gate recess process exhibited an etch rate of 20 nm/min for the AlGaN layer and the clean surface characteristics at the etched AlGaN/gate metal interface for the AlGaN/GaN HEMT devices. The recessed 0.17 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a high gateto-drain breakdown voltage of -177 V, a good Schottky diode ideality factor of 1.32, an extrinsic transconductance (gm) of 245 mS/mm, and a threshold voltage (Vth) of -2.6 V. The recessed 0.17 μm × 200 μm AlGaN/GaN HEMT devices also exhibited high RF performance, having a cut-off frequency (fT) of 46 GHz and a maximum oscillation frequency (fmax) of 150 GHz.
KSP Keywords
20 nm, 6 GHz, AlGaN/GaN HEMTs, Breakdown voltage(BDV), DC Characteristics, Diode ideality factor, Etch rates, GaN HEMT devices, Gas mixture, Gate recess, High electron mobility transistor(HEMT)
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