상세정보
학술지
1/f noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under Fowler-Nordheim stress
- 발행일
- 200304
- 출처
- IEEE Transactions on Electron Devices, v.50 no.4, pp.1152-1156
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 02MB1400, 실리콘 미래 신소자 원천기술 개발, 이성재
- 초록
- The 1 / f noise in Si0.8Ge0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si0.8Ge0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (Not) near the Fermi level (EF) in the device. However, all samples in this study, including the Si control and the Si0.2Ge0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 횇, revealed almost identical relative changes in 1 / f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in Not at the EF in the devices during F-N stress.
- KSP 제안 키워드
- 1/f Noise, Fermi level, Fowler-Nordheim (F-N) stress, Fowler-Nordheim stress, Minimum Noise, Oxide trap density, Si-CaP, Wide range