상세정보
학술지
High Power 0.25 μm Gate GaN HEMTs on Sapphire with Power Density 4.2 W/mm at 10 GHz
- 저자
- 윤두협, V Kumar, 이재훈, R. Schwindt, W.-J. Chang, J.-Y. Hong, 전창민, 배성범, 박미란, 이규석, J.-L. Lee, 이정희, I. Adesida
- 발행일
- 200303
- 출처
- Electronics Letters, v.39 no.6, pp.566-567
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 02MB1300, 차세대 무선 인터넷을 위한 고출력 고주파 GaN 전자소자 연구, 이규석
- 초록
- Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 μm gate-length AlGaN/GaN HEMTs, were fabricated on sapphire substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm, high transconductance up to 223 mS/mm, short-circuit current gain cutoff frequency (fT) of 67 GHz, and maximum frequency of oscillation (fmax) of 102 GHz.
- KSP 제안 키워드
- 10 Ghz, AlGaN/GaN HEMTs, Chemical vapour deposition(CVD), Current gain cutoff frequency, Drain current, High electron mobility transistor(HEMT), High power, Maximum Frequency, Metal-organic chemical vapour deposition(MOCVD), Power Density, Sapphire substrates