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High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
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- Authors
- D.-H. Youn, V Kumar, J.-H. Lee, R. Schwindt, W.-J. Chang, J.-Y. Hong, C.-M. Jeon, S.-B. Bae, M.-R. Park, K.-S. Lee, J.-L. Lee, J.-H. Lee, I. Adesida
- Issue Date
- 2003-03
- Citation
- Electronics Letters, v.39, no.6, pp.566-567
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 μm gate-length AlGaN/GaN HEMTs, were fabricated on sapphire substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm, high transconductance up to 223 mS/mm, short-circuit current gain cutoff frequency (fT) of 67 GHz, and maximum frequency of oscillation (fmax) of 102 GHz.
- KSP Keywords
- AlGaN/GaN HEMTs, Chemical vapour deposition(CVD), Current gain cutoff frequency, Drain current, High electron mobility transistor(HEMT), High power, Maximum Frequency, Metal-organic chemical vapour deposition(MOCVD), Power Density, Sapphire substrates, Short-Circuit Current