Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 μm gate-length AlGaN/GaN HEMTs, were fabricated on sapphire substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm, high transconductance up to 223 mS/mm, short-circuit current gain cutoff frequency (fT) of 67 GHz, and maximum frequency of oscillation (fmax) of 102 GHz.
KSP Keywords
AlGaN/GaN HEMTs, Chemical vapour deposition(CVD), Current gain cutoff frequency, Drain current, High electron mobility transistor(HEMT), High power, Maximum Frequency, Metal-organic chemical vapour deposition(MOCVD), Power Density, Sapphire substrates, Short-Circuit Current
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