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Journal Article High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
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Authors
D.-H. Youn, V Kumar, J.-H. Lee, R. Schwindt, W.-J. Chang, J.-Y. Hong, C.-M. Jeon, S.-B. Bae, M.-R. Park, K.-S. Lee, J.-L. Lee, J.-H. Lee, I. Adesida
Issue Date
2003-03
Citation
Electronics Letters, v.39, no.6, pp.566-567
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el:20030339
Abstract
Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 μm gate-length AlGaN/GaN HEMTs, were fabricated on sapphire substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm, high transconductance up to 223 mS/mm, short-circuit current gain cutoff frequency (fT) of 67 GHz, and maximum frequency of oscillation (fmax) of 102 GHz.
KSP Keywords
AlGaN/GaN HEMTs, Chemical vapour deposition(CVD), Current gain cutoff frequency, Drain current, High electron mobility transistor(HEMT), High power, Maximum Frequency, Metal-organic chemical vapour deposition(MOCVD), Power Density, Sapphire substrates, Short-Circuit Current