상세정보
학술대회
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Cited - time in 
Download 8 time
Share 
Download 8 time
Share
- 발행일
- 201509
- 출처
- International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177
- 초록
- We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of 114 μA at -15 V, a breakdown voltage of 794 V.
- KSP 제안 키워드
- AlGaN/GaN-on-Si, Breakdown voltage(BDV), Channel Width, Conversion efficiency(C.E.), Dry etch, Forward and reverse, Forward current, High power conversion efficiency, Leakage current, PFC converter, Structural changes