BROWSE
Detail
Journal Article
Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter
Cited 2 time in 
Share 
Share
- Authors
- Jong-Il Won, Jin-Gun Koo, Doo-Hyung Cho, Kun-Sik Park, Yil-Suk Yang, Sang-Gi Kim
- Issue Date
- 2015-10
- Citation
- Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we present a new 6-pack power module for a 3-phase inverter that is integrated with the six trench gate double diffused metal-oxide semiconductor field-effect transistor (TDMOS) on a single chip. An integration of each power device is performed through a trench isolation technique using deep reactive-ion etching trench technologies. Through this new technology, the integrated power metal-oxide semiconductor field-effect transistor (MOSFET) produces a high current of above 30 A at a gate bias of 10 V. In addition, each trench power MOSFET (1-pack) has a minimum specific on-resistance of 21 mohm.cm2 and a typical breakdown voltage of 95 V. The trench isolation provides good isolation up to 120 V. The measurement results show that this 6-pack structure can successfully be integrated with other analog/driver integrated circuit on a single chip. Furthermore, to monitor the operating current of the MOSFET under an inverter-operating condition, sensing FET is integrated a FET into the main MOSFET source region without compromising either the area or the operation of the MOSFET.
- KSP Keywords
- 3-phase inverter, Breakdown Voltage, Field Effect Transistor(FET), High Current, Isolation technique, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Operating condition, Power device, Reactive ion etching, Single chip