상세정보
학술지
Near Room-Temperature Continuous-Wave Operation of Ail-Monolithic InAlGaAs/InP 1.3 um VCSELs
- 발행일
- 200304
- 출처
- Electronics Letters, v.39 no.8, pp.664-665
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 02MB4300, 근거리 광통신용 1.3㎛ 표면방출 레이저 어레이, 주영구
- 초록
- InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ~2.8 mA.
- KSP 제안 키워드
- Air-gap, Room-temperature, Selective wet etching, Single step, Threshold current, continuous wave(CW), current confinement