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Journal Article
Near room-temperature continuous-wave operation of all-monolithic InAlGaAs∕InP 1.3 [micro sign]m VCSELs
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- Authors
- Jae-Heon Shin, Jong-Hee Kim, Hyun-Woo Song, Il-Young Han, Young-Gu Ju, Won-Seok Han, O-Kyun Kwon
- Issue Date
- 2003-04
- Citation
- Electronics Letters, v.39, no.8, pp.664-665
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- InAlGaAs/InP-hused all-monolithic 1.3 μm VCSELs operating continuous wave up to 18 C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15 C is ~2.8 mA.
- KSP Keywords
- Air-gap, Room-temperature, Selective wet etching, Single step, Threshold current, continuous wave(CW), current confinement