ETRI-Knowledge Sharing Plaform

로그인

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing
Cited 35 time in scopus Download 3 time Share share facebook twitter linkedin kakaostory
저자
위재형, 김태건, 김정원, 이우정, 조대형, 한원석, 정용덕
발행일
201507
출처
ACS Applied Materials & Interfaces, v.7 no.31, pp.17425-17432
ISSN
1944-8244
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/acsami.5b04815
초록
We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.
키워드
bottom cell, Cu(In,Ga)Se 2, depth profiling, energy band alignment, thermal annealing, Zn(O,S)
KSP 제안 키워드
Buffer layer, Buffer material, CIGS solar cell, Depth profiling(DP), Electron Transport, Energy band alignment, Energy band gap, Local energy, Solar cell efficiency, Thermal annealing, Thermal stability(TGA)