상세정보
학술지
0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
- 발행일
- 201511
- 출처
- IEEE Electron Device Letters, v.36 no.11, pp.1132-1134
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 15MB1500, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
- 초록
- A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-on voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82μ A/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.
- KSP 제안 키워드
- 16 nm, AlGaN/GaN-on-Si, Breakdown voltage(BDV), Channel Width, Device size, Dry etch, Forward current, Reverse leakage current, Turn-on voltage, electrical characteristics, reverse recovery charge