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0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
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- Authors
- Hyun-Soo Lee, Dong Yun Jung, Youngrak Park, Jeho Na, Hyun-Gyu Jang, Hyoung-Seok Lee, Chi-Hoon Jun, Junbo Park, Sang-Ouk Ryu, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2015-11
- Citation
- IEEE Electron Device Letters, v.36, no.11, pp.1132-1134
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-on voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82μ A/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.
- KSP Keywords
- 16 nm, AlGaN/GaN-on-Si, Breakdown Voltage, Channel Width, Device size, Dry etch, Electrical characteristics, Forward current, Reverse leakage current, Turn-on voltage, reverse recovery charge