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Journal Article
Linearised HBT MMIC Power Amplifier with Partially RF Coupled Active Bias Circuit for W-CDMA Portable Terminals Applications
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- Authors
- Joon H. Kim, Ji H. Kim, Youn S. Noh, Chul S. Park
- Issue Date
- 2003-05
- Citation
- Electronics Letters, v.39, no.10, pp.781-783
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- A highly linear MMIC power amplifier for wideband code-division multiple-access (W-CDMA) portable terminals has been devised and implemented with a new integrated on-chip lineariser. The proposed lineariser, consisting of an InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit partially coupled to RF input power together with a feedback capacitor, effectively improves gain compression with little insertion power loss and no additional die area. The optimised lineariser improves maximum output power (P1 dB) by 2 dB and adjacent channel leakage power ratio (ACLR) by 4 dB, and the implemented HBT MMIC power amplifier exhibits a P1 dB of 30 dBm, a power gain of 30 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and an ACLR of -34 dBc at 27 dBm of output power.
- KSP Keywords
- Active bias, Adjacent channel leakage ratio(ACLR), Code division Multiple Access(CDMA), GaAs heterojunction bipolar transistor, Heterojunction Bipolar Transistors(HBTs), Highly linear, InGaP/GaAs heterojunction, Input power, Leakage power, MMIC power amplifier, On-chip