상세정보
학술지
Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers
- 발행일
- 200306
- 출처
- ETRI Journal, v.25 no.3, pp.195-202
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 02MB3200, 1~5GHz 대역 직접 변환 다중밴드 통합 칩 기술개발, 박문양
- 초록
- This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.
- KSP 제안 키워드
- Blocking performance, Channel Width, Diffusion-type, High power, Low temperature(LT), Peak power, Power added efficiency(PAE), Power device, RF Power, RF performance, Small signal gain