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A packaged. 2.3 GHz SiGe VCO with parallel-branch inductors
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- Authors
- Ja-Yol Lee, Dongwoo Suh, Sang-Heung Lee, Seung-Yun Lee, Chan-Woo Park, Sang Hoon Kim, Kyu-Hwan Shim, Jin-Young Kang, Kyoung-Ik Cho, Seung Hyeub Oh
- Issue Date
- 2003-06
- Citation
- International Microwave Symposium (IMS) 2003, pp.A141-A144
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using a 0.8-/spl mu/m SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of -122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm /spl times/ 1.2 mm chip area.
- KSP Keywords
- 2 mm, 2.3 GHz, Chip area, GHz VCO, Quality-factor(Q-factor), SiGe HBT, Supply voltage, phase noise, process technology