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Conference Paper A 2-stage 5GHz-band MMIC Power Amplifier for WLAN using a 0.5um PHEMT Process
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Authors
Dong Min Kang, Hong Gu Ji, Ho Kyun Ahn, Jae Kyung Mun, Min Park, Hae Cheon Kim
Issue Date
2003-07
Citation
International Technical Conference on Circuits Systems, Computers and Communications (ITC-CSCC) 2003, pp.693-695
Publisher
IEEE
Language
English
Type
Conference Paper
Abstract
The design and fabrication of a 5GHz-band monolithic microwave integrated circuit (MMIC) power amplifier for WLAN are presented using 0.5 ㎛ quasienhanced power pseudomorphic high electron mobility transistor (PHEMT). The PA is a single-ended 2-stage design. The measurement results are achieved as an input return loss under -12dB, an output return loss under -8dB, a gain of 14.5dB, a PAE of 30%, and a P1dB of 26dBm at operating frequency (5.725GHz ~ 5.825GHz) using a single power supply of 5V. The chip size is 1.8×1.1mm 2 . This MMIC amplifier will be used as the unit cell to develop transmitters for use in 5GHz-band wireless LAN systems. In this paper, the 5GHz-band MMIC design technique is achieved with design and fabrication of 5GHz-band MMIC PA using ETRI's own MMIC library and foundry.
KSP Keywords
Design and fabrication, Design techniques, High electron mobility transistor(HEMT), Input return loss, MMIC power amplifier, Microwave monolithic integrated circuits(MMIC), Operating frequency, Return loss(RL), Single-Ended, Wireless Local Area Networks(WLANs), measurement results