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A 2-stage 5GHz-band MMIC Power Amplifier for WLAN using a 0.5um PHEMT Process
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- Authors
- Dong Min Kang, Hong Gu Ji, Ho Kyun Ahn, Jae Kyung Mun, Min Park, Hae Cheon Kim
- Issue Date
- 2003-07
- Citation
- International Technical Conference on Circuits Systems, Computers and Communications (ITC-CSCC) 2003, pp.693-695
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- The design and fabrication of a 5GHz-band monolithic microwave integrated circuit (MMIC) power amplifier for WLAN are presented using 0.5 ㎛ quasienhanced power pseudomorphic high electron mobility transistor (PHEMT). The PA is a single-ended 2-stage design. The measurement results are achieved as an input return loss under -12dB, an output return loss under -8dB, a gain of 14.5dB, a PAE of 30%, and a P1dB of 26dBm at operating frequency (5.725GHz ~ 5.825GHz) using a single power supply of 5V. The chip size is 1.8×1.1mm 2 . This MMIC amplifier will be used as the unit cell to develop transmitters for use in 5GHz-band wireless LAN systems. In this paper, the 5GHz-band MMIC design technique is achieved with design and fabrication of 5GHz-band MMIC PA using ETRI's own MMIC library and foundry.
- KSP Keywords
- Design and fabrication, Design techniques, High electron mobility transistor(HEMT), Input return loss, MMIC power amplifier, Microwave monolithic integrated circuits(MMIC), Operating frequency, Return loss(RL), Single-Ended, Wireless Local Area Networks(WLANs), measurement results