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VBIC Model Application and Parameter Extraction and Optimization for SiGe HBT
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- Authors
- Chan-Woo park, Sang-Heung Lee, Seung-Yun Lee, Ja-Yol Lee, Jin-Yeong Kang
- Issue Date
- 2003-08
- Citation
- 한국통신학회논문지 B : 네트워크 및 융합 서비스, v.28, no.8A, pp.650-656
- ISSN
- 1226-4717
- Publisher
- 한국통신학회 (KICS)
- Language
- English
- Type
- Journal Article
- Abstract
- In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.