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Journal Article
Reduced Cell Pitch and On-resistance of Trench MOSFET by Employing Source on Trench Sidewall
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- Authors
- Il-Yong Park, Sang-Gi Kim, Jin-Gun Koo, Jongdae Kim
- Issue Date
- 2003-09
- Citation
- Electronics Letters, v.39, no.19, pp.1414-1415
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- Novel structures for fabricating highly dense trench MOSFETs are proposed. The source region is formed on the trench sidewall by using self-aligned process techniques including three-step trench etching. The simulated breakdown voltage and the on-resistance for a cell pitch of 1.0 μm are 45 V and 12.9 m廓쨌mm2, respectively.