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Journal Article Effects of high-dose BF2+ implantation on the formation of Ti-germanosilicide on polycrystalline Si/Si0.87Ge0.13/Si layers
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Authors
Chan Woo Park, Seung-Yun Lee, Sang-Hoon Kim, Jin-Yeong Kang
Issue Date
2003-09
Citation
Journal of Vacuum Science and Technology B, v.21, no.5, pp.2193-2197
ISSN
1071-1023
Publisher
American Vacuum Society (AVS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1116/1.1612936
Abstract
The high-dose BF2+ implantation, which is employed for forming resistors and lowering the extrinsic base resistance in the SiGe heterojunction bipolar transistor (HBT) integrated circuit (IC) fabrication process, is shown to have strong effects on the Ti-silicidation behavior of the polycrystalline Si/Si0.87Ge0.13/Si stack layer. As the dose of BF2+ increases from 4×1014 to 4.4×1015 cm−2, the growth and C49-to-C54 transformation of the silicide/germanosilicide layer and protrusions are highly enhanced, which is consistent with previous observations on the defect-assisted nucleation of silicide grains. However, the final sheet resistance increases with increasing dose of BF2+. Such an inconsistency between the amount of C54 phase and the sheet resistance is probably due to the formation of numerous surface voids on the silicide layer from the fluorine-containing gaseous complexes. As the number of germanosilicide protrusions increases with increasing dose of BF2+, the contact resistance also increases because the protrusions are readily etched away during contact opening and leave behind cavities within the Si/Si0.87Ge0.13/Si layer. To achieve lower values of extrinsic base and contact resistances in SiGe HBT ICs, it is desirable to replace the BF2+ with B+ as well as thicken the Si cap layer on the contact region using the selective growth process of Si.
KSP Keywords
Cap layer, Contact region, Contact resistance(73.40.Cg), Extrinsic base, Growth process, Heterojunction Bipolar Transistors(HBTs), Integrated circuit, Selective growth, Si layer, SiGe HBT, SiGe heterojunction bipolar transistor