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Journal Article Excimer Laser Annealed Poly-Si Thin Film Transistor with Self-aligned Lightly Doped Drain Structure
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Authors
Yong-Hae Kim, Chi-Sun Hwang, Yoon-Ho Song, Choong-Heui Chung, Young-Wook Ko, Choong-Yong Sohn, Bong-Chul Kim, Jin Ho Lee
Issue Date
2003-09
Citation
Thin Solid Films, v.440, no.1-2, pp.169-173
ISSN
0040-6090
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/S0040-6090(03)00853-8
Abstract
We have made an excimer laser annealed poly-Si thin film transistor (TFT). The stress of the poly-Si films crystallized by excimer laser annealing is studied by Raman spectroscopy. The transverse-optic phonon frequency is independent of the excimer laser energy, but dependant on the precursor a-Si film thickness. The nMOS TFT with a self-aligned lightly doped drain (LDD) structure shows low leakage current. The large leakage current of the pMOS TFT with non-LDD structure is reduced by the off-state stress. The gate to channel capacitance as a function of gate voltage for nMOS TFT shows the characteristic parallel shift of the capacitance-voltage curves with frequency variation. © 2003 Elsevier Science B.V. All rights reserved.