상세정보
학술지
Excimer Laser Annealed Poly-Si Thin Film Transistor with Self-aligned Lightly Doped Drain Structure
- 발행일
- 200309
- 출처
- Thin Solid Films, v.440 no.1-2, pp.169-173
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 01MM3500, 모바일 디스플레이용 SOD 핵심기술 개발, 이진호
- 초록
- We have made an excimer laser annealed poly-Si thin film transistor (TFT). The stress of the poly-Si films crystallized by excimer laser annealing is studied by Raman spectroscopy. The transverse-optic phonon frequency is independent of the excimer laser energy, but dependant on the precursor a-Si film thickness. The nMOS TFT with a self-aligned lightly doped drain (LDD) structure shows low leakage current. The large leakage current of the pMOS TFT with non-LDD structure is reduced by the off-state stress. The gate to channel capacitance as a function of gate voltage for nMOS TFT shows the characteristic parallel shift of the capacitance-voltage curves with frequency variation. © 2003 Elsevier Science B.V. All rights reserved.
- KSP 제안 키워드
- A-Si, Capacitance-voltage, Laser energy, Lightly doped drain(LDD), Phonon frequencies, Poly-Si thin film, Polycrystalline silicon(poly-Si), Raman spectroscopy, Si film thickness, Thin-Film Transistor(TFT), excimer laser annealing