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학술대회 Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications
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저자
박민, 안호균, 강동민, 지홍구, 문재경, 김해천, 조경익
발행일
200310
출처
European Microwave Conference (EuMC) 2003, pp.371-374
DOI
https://dx.doi.org/10.1109/EUMC.2003.1262296
협약과제
03MB1600, 60GHz 광대역 무선 LAN 기술 개발, 조경익
초록
A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= -0.65 V, Vbdg=26 V, Imax=l44 mA/mm at Vgs=0.2 V, Gm=34O mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 % at 5 V under Vgs=O V, GL=14.5 dB, OIP3=37.5 dBm. © 2003 EUMA.
KSP 제안 키워드
5 GHz, 5.8 GHz, High performance, Power device, Single supply, WLAN applications, high linearity, on-wafer, power amplifiers(PAs)