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Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications
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- Authors
- Min Park, Hokyun Ahn, Dong Min Kang, Honggu Ji, Jaekyoung Mun, Haecheon Kim, Kyoung Ik Cho
- Issue Date
- 2003-10
- Citation
- European Microwave Conference (EuMC) 2003, pp.371-374
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= -0.65 V, Vbdg=26 V, Imax=l44 mA/mm at Vgs=0.2 V, Gm=34O mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 % at 5 V under Vgs=O V, GL=14.5 dB, OIP3=37.5 dBm. © 2003 EUMA.
- KSP Keywords
- 5 GHz, 5.8 GHz, High performance, Power device, Single supply, WLAN applications, high linearity, on-wafer, power amplifiers(PAs)