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Journal Article
E-Band Wideband MMIC Receiver Using 0.1 um GaAs pHEMT Process
- Authors
- Bong-Su Kim, Woo-Jin Byun, Min-Soo Kang, Kwang Seon Kim
- Issue Date
- 2012-01
- Citation
- ETRI Journal, v.34, no.4, pp.485-491
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, the implementations of a 0.1 μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm. © 2012 ETRI.
- KSP Keywords
- 15 GHz, 6 GHz, GaAs pHemt, Gallium Arsenide(GaAs), High electron mobility transistor(HEMT), Line matching, Noise Figure(NF), Single chip, Transmission line, good flatness, high gain