상세정보
학술지
E-Band Wideband MMIC Receiver Using 0.1 um GaAs pHEMT Process
- 발행일
- 201201
- 출처
- ETRI Journal, v.34 no.4, pp.485-491
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 11PR2500, 스펙트럼 공학 및 밀리미터파대 전파자원 이용기술개발, 최재익
- 초록
- In this paper, the implementations of a 0.1 μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm. © 2012 ETRI.
- KSP 제안 키워드
- 15 GHz, 6 GHz, GaAs pHemt, Gallium Arsenide(GaAs), High electron mobility transistor(HEMT), Line matching, Noise Figure(NF), Single-Chip, Transmission line, good flatness, high gain