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Asymmetric Multiple-quantum-well Laser Diodes with Wide and Flat Gain
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- Authors
- Oh-Kee Kwon, Kang-ho Kim, Eun-Deok Sim, Jong-Hoi Kim, Hyun-Soo Kim, Kwang-Ryong Oh
- Issue Date
- 2003-11
- Citation
- Optics Letters, v.28, no.22, pp.2189-2191
- ISSN
- 0146-9592
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Abstract
- Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm. © 2003 Optical Society of America.
- KSP Keywords
- Active Layer, Barrier layers, Laser diode(LD), Multiple-quantum-well(MQW), Quantum Well(QW), Quantum-well laser diodes, Ridge waveguides(RWs), flat gain, gain bandwidth, ridge waveguide laser