상세정보
학술지
Asymmetric Multiple-quantum-well Laser Diodes with Wide and Flat Gain
- 발행일
- 200311
- 출처
- Optics Letters, v.28 no.22, pp.2189-2191
- ISSN
- 0146-9592
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 03MB3300, 파장 가변 광원 집적 10Gbps 파장 변환기, 오광룡
- 초록
- Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm. © 2003 Optical Society of America.
- KSP 제안 키워드
- Active Layer, Barrier layers, Laser diode(LD), Multiple-quantum-well(MQW), Quantum Well(QW), Quantum-well laser diodes, Ridge waveguides(RWs), flat gain, gain bandwidth, ridge waveguide laser