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An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets
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- Authors
- Joon Hyung Kim, Ji Hoon Kim, Y.S. Noh, Chul Soon Park
- Issue Date
- 2003-06
- Citation
- IEEE Journal of Solid-State Circuits, v.38, no.6, pp.905-910
- ISSN
- 0018-9200
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high power-added efficiency (PAE), especially at the most probable transmission power of wide-band code-division multiple-access handsets. A PAE of 21% at 16 dBm of output power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 40% at 28 dBm, the required maximum output power, with a single-chip MMIC power amplifier. The power amplifier has been devised with two InGaP-GaAs heterojunction bipolar transistor amplifying chains parallel connected, each chain being optimized for a different P1 dB dB (1-dB compression point) value: one for 16 dBm for the low-power mode, targeting the most probable transmission power, and the other for 28 dBm for the high-power mode. The high-power mode operation shows 40% of PAE and -30 dBc of adjacent channel leakage power ratio (ACLR) at the maximum output power of 28 dBm. The low-power mode operation exhibits -34 dBc of ACLR at 16 dBm with 14 mA of a quiescent current. This amplifier improves power usage efficiency and, consequently, the battery lifetime of the handset by a factor of three.
- KSP Keywords
- 1-dB compression point, Adjacent channel leakage ratio(ACLR), As 4, Battery lifetime, Code division Multiple Access(CDMA), GaAs HBT, GaAs heterojunction bipolar transistor, Heterojunction Bipolar Transistor(HBT), High Power, Insulated gate bipolar transistor(IGBT), Integrated circuit(IC)