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Journal Article
Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors
- Authors
- Kang-Jun Baeg, Dongyoon Khim, Soon-Won Jung, Jae Bon Koo, In-Kyu You, Yoon-Chae Nah, Dong-Yu Kim, Yong-Young Noh
- Issue Date
- 2011-12
- Citation
- ETRI Journal, v.33, no.6, pp.887-896
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic fieldeffect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits. © 2011 ETRI.
- KSP Keywords
- Charge transport, Electronic circuit, Field Effect Transistor(FET), High performance, Organic electronics, P-Channel, Polymer dielectric, Regioregular poly(3-hexylthiophene), Solvent effect, gate dielectric, inkjet-printed