상세정보
학술지
Polymer Dielectrics and Orthogonal Solvents Effects for High-Performance Inkjet-Printed Top-Gated P-channel Polymer Field-Effect Transistors
- 발행일
- 201112
- 출처
- ETRI Journal, v.33 no.6, pp.887-896
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 초록
- We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic fieldeffect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits. © 2011 ETRI.
- KSP 제안 키워드
- 3-hexylthiophene(SEM poly), Charge transport, Electronic circuit, Field-effect transistors(FETs), High performance, P-Channel, Polymer dielectric, gate dielectric, inkjet-printed, methyl methacrylate(Macroporous poly), organic electronic