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Conference Paper Novel lithography process for extreme deep trench by using laminated negative dry film resist
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Authors
Moon-Youn Jung, Won Ick Jang, Chang Auck Choi, Myung Rae Lee, Chi Hoon Jun, Youn Tae Kim
Issue Date
2004-01
Citation
International Conference on Micro Electro Mechanical Systems (MEMS) 2004, pp.685-688
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/MEMS.2004.1290677
Abstract
For the fabrication of MEMS(micro electro mechanical system) devices such as HAR(high-aspect-ratio) microstructures with an extreme deep trench, a novel lithography method was newly developed in this study. In the case of the deep trench, the liquid photoresist is not or very thinly coated at edge parts of the trench boundary. And, if a very thick resist coated, it is nearly impossible to develop the photoresist in the deep trench. To solve these problems, it is capped by laminating negative DFR(dry film resist) film on the cavity opening of the deep trench. Then positive photoresist is conventionally coated and patterned by the same photomask for the deep trench. To apply electric signals from outside to inside of the trench, aluminum on sidewall and bottom of the deep trench was successfully patterned by newly developed lithography method.
KSP Keywords
Deep Trench, High aspect ratio, Micro-electro-mechanical system(MEMS), Positive Photoresist, dry film resist, lithography process, thick resist