상세정보
학술지
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
- 저자
- 장문규, 이성재, Kyoungwan Park
- 발행일
- 200312
- 출처
- IEEE Transactions on Nanotechnology, v.2 no.4, pp.205-209
- ISSN
- 1536-125X
- 출판사
- IEEE
- 협약과제
- 03MB2200, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence with the experimental results in 10-μm-long channel n-type SBTTs. From these results, the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60-nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 105 at low-drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current.
- KSP 제안 키워드
- Drain current, Drain voltage, Long channel, N-type, Numerical simulations, Off Current, Schottky barrier height, Schottky barrier tunneling, Tunnel transistors, Tunneling current, current on-off ratio