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Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
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- Authors
- Moongyu Jang, Seongjae Lee, Kyoungwan Park
- Issue Date
- 2003-12
- Citation
- IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209
- ISSN
- 1536-125X
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence with the experimental results in 10-μm-long channel n-type SBTTs. From these results, the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60-nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 105 at low-drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current.