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Conference Paper Ku-Band GaAs MMIC High Power Amplifier with High Efficiency and Broadband
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Authors
Inkwon Ju, Hong-gu Ji, In-Bok Yom
Issue Date
2015-04
Citation
Conference on Microwave Techniques (COMITE) 2015, pp.1-4
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/COMITE.2015.7120324
Project Code
14MR3100, Development of Flexible Payload Technologies for Next Satellite Broadcasting and Communications, Ahn Jae Young
Abstract
In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-廓 input and output impedance.
KSP Keywords
6 GHz, GaAs MMIC, GaAs pHemt, High power amplifier(HPA), Intercept point(IIP3), Ku-Band, Microwave monolithic integrated circuits(MMIC), Output impedance, Power added efficiency(PAE), Saturated output power, Small signal gain