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학술대회 Ku-Band GaAs MMIC High Power Amplifier with High Efficiency and Broadband
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저자
주인권, 지홍구, 염인복
발행일
201504
출처
Conference on Microwave Techniques (COMITE) 2015, pp.1-4
DOI
https://dx.doi.org/10.1109/COMITE.2015.7120324
협약과제
14MR3100, 차기위성 Flexible 통신방송 탑재체 핵심기술 개발, 안재영
초록
In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-廓 input and output impedance.
키워드
GaAs pHEMT, high-power amplifer (HPA), monolithic microwave integrated circuit (MMIC) power amplifier
KSP 제안 키워드
6 GHz, GaAs MMIC, GaAs pHemt, High power amplifier(HPA), Intercept point(IIP3), Ku-Band, Microwave monolithic integrated circuits(MMIC), Output impedance, Power added efficiency(PAE), Saturated output power, Small signal gain