상세정보
학술지
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
- 발행일
- 200405
- 출처
- IEEE Transactions on Electron Devices, v.51 no.5, pp.785-789
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 03ZB1300, 정보통신 원천기술 연구, 정태형
- 초록
- In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.
- KSP 제안 키워드
- Al doping, Al-doped, Current gain cutoff frequency, Drain current, GaN HEMT, GaN heterostructures, High electron mobility transistor(HEMT), High power, High-quality, Maximum Frequency, Metalorganic chemical vapor deposition