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Variable inductance multilayer inductor with MOSFET switch control
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- Authors
- Piljae Park, Cheon Soo Kim, Mun Yang Park, Sung Do Kim, Hyun Kyu Yu
- Issue Date
- 2004-03
- Citation
- IEEE Electron Device Letters, v.25, no.3, pp.144-146
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 μm, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact size and variable inductance feature, the proposed variable inductor is a prospective key component for the multiband RF circuits such as electrically controllable matching circuits and wide tuning range voltage controlled oscillators (VCOs).