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Journal Article Variable inductance multilayer inductor with MOSFET switch control
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Authors
Piljae Park, Cheon Soo Kim, Mun Yang Park, Sung Do Kim, Hyun Kyu Yu
Issue Date
2004-03
Citation
IEEE Electron Device Letters, v.25, no.3, pp.144-146
ISSN
0741-3106
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LED.2003.822670
Abstract
A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 μm, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact size and variable inductance feature, the proposed variable inductor is a prospective key component for the multiband RF circuits such as electrically controllable matching circuits and wide tuning range voltage controlled oscillators (VCOs).
KSP Keywords
2.4 GHz, Chip area, Compact size, Inductance feature, Key Components, MOSFET switch, Multilayer Inductor, RF circuits, Single-layer, Standard CMOS process, Switch control