상세정보
학술지
Variable inductance multilayer inductor with MOSFET switch control
- 발행일
- 200403
- 출처
- IEEE Electron Device Letters, v.25 no.3, pp.144-146
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 03MB3700, 차세대 통합 휴대 단말 기술, 조경익
- 초록
- A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 μm, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact size and variable inductance feature, the proposed variable inductor is a prospective key component for the multiband RF circuits such as electrically controllable matching circuits and wide tuning range voltage controlled oscillators (VCOs).
- KSP 제안 키워드
- 2.4 GHz, Chip area, Compact size, Inductance feature, Key Components, MOSFET switch, Multilayer Inductor, RF circuits, Single-layer, Standard CMOS process, Switch control