상세정보
학술지
InGaAsP/InP Laser Diodes Monolithically Integrated with Waveguide-Type Light Deflectors
- 발행일
- 200404
- 출처
- Japanese Journal of Applied Physics, v.43 no.4B, pp.543-544
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP)
- 협약과제
- 03MB3300, 파장 가변 광원 집적 10Gbps 파장 변환기, 오광룡
- 초록
- A ridge waveguide-type InGaAsP/InP laser diodes monolithically integrated with light deflectors (DLDs) were fabricated and light deflection was demonstrated, for the first time. The light deflection was simulated and measured in a fabricated device. The output beam deflection in a fabricated device was controlled by carrier induced refractive index change of the deflector. The maximum beam deflection angle of 3.12째 was obtained at an applied current of 15mA.
- KSP 제안 키워드
- Applied current, Deflection angle, Laser diode(LD), Light deflectors, Refractive index change, Ridge waveguides(RWs), beam deflection, monolithically integrated