상세정보
학술지
A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers
- 발행일
- 201112
- 출처
- ETRI Journal, v.33 no.6, pp.969-972
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 10MB2800, 차세대 무선 융합 단말용 Advanced Digital RF 기술 개발, 유현규
- 초록
- This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-μm CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply. © 2011 ETRI.
- KSP 제안 키워드
- CMOS RF, CMOS Technology, Control range, Gain Control, Low-IF, Low-Power, Mobile TV, Noise Figure(NF), Power Consumption, Power band, RF front end