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Journal Article High-density Trench Gate DMOSFETs with Trench Contact Structure
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Authors
J. Kim, S.-G. Kim, T.M. Roh, B. Lee
Issue Date
2004-05
Citation
Electronics Letters, v.40, no.11, pp.699-700
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el:20040478
Abstract
A novel process technique for fabricating trench gate DMOSFETs using the two-step trench technique and trench contact structure is realised to obtain higher cell density and lower on-resistance. Using this process technique, a remarkably increased trench gate DMOSFET with a cell pitch of 1.6 μm and a channel density of 130 Mcell/in2 are obtained. The fabricated device has a low specific on-resistance of 0.28 m廓 쨌 cm2 with a blocking voltage of 43 V, which is about 23 % lower than that of the device fabricated by the previous method.
KSP Keywords
3 V, Blocking voltage, Cell density, Channel Density, Contact structure, High-density, Novel process, Process technique, Two-Step, low specific on-resistance, trench gate