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Detail
Journal Article
Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si3N4 Mixed Target
- Authors
- Nae-Man Park, Sang Hyeob Kim, Gun Yong Sung
- Issue Date
- 2004-06
- Citation
- ETRI Journal, v.26, no.3, pp.257-261
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and Si 3N4 powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30 ~ 70 wt.% SiC in the target to be an intermediate phase of SiC and SiNx. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.
- KSP Keywords
- Amorphous SiCN films, Carbon nitride films, Film composition, Films by pulsed laser deposition, Intermediate phase, Mixing ratio, Pulsed-laser deposition(PLD), Silicon carbon nitride, Target-to-substrate distance, amorphous silicon