상세정보
학술지
Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si3N4 Mixed Target
- 발행일
- 200406
- 출처
- ETRI Journal, v.26 no.3, pp.257-261
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 03MB2200, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and Si 3N4 powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30 ~ 70 wt.% SiC in the target to be an intermediate phase of SiC and SiNx. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.
- KSP 제안 키워드
- Amorphous SiCN films, Carbon nitride films, Film composition, Films by pulsed laser deposition, Mixing ratio, Pulsed-laser deposition(PLD), Silicon carbon nitride, Target-to-substrate distance, amorphous silicon, intermediate phase