상세정보
학술지
Room-temperature operation of InP-based InAs quantum dot laser
- 발행일
- 200407
- 출처
- IEEE Photonics Technology Letters, v.16 no.7, pp.1607-1609
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 03MB2500, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- A ridge waveguide quantum dot (QD) laser with a stripe width of 15 μm was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrate. Room-temperature lasing operation was observed at 1.501 μm, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature. © 2004 IEEE.
- KSP 제안 키워드
- Characteristic temperature, InAs QDs, InAs Quantum dots, InP-based, Material system, Ridge waveguides(RWs), Room-temperature operation, Temperature range, Threshold current density, quantum dot laser, temperature dependence