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Room-temperature operation of InP-based InAs quantum dot laser
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- Authors
- Jin Soo Kim, Jin Hong Lee, Sung Ui Hong, Won Seok Han, Ho-Sang Kwack, Chul Wook Lee, Dae Kon Oh
- Issue Date
- 2004-07
- Citation
- IEEE Photonics Technology Letters, v.16, no.7, pp.1607-1609
- ISSN
- 1041-1135
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A ridge waveguide quantum dot (QD) laser with a stripe width of 15 μm was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrate. Room-temperature lasing operation was observed at 1.501 μm, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature. © 2004 IEEE.
- KSP Keywords
- Characteristic temperature, InAs QDs, InAs quantum dots, InP-based, Material system, Quantum dot(Qdot), Quantum dot laser(QDL), Room-temperature operation, Temperature range, Threshold current density, ridge waveguide