상세정보
학술지
Dielectric characteristics of Co doped ZnO thin films at terahertz frequencies
- 발행일
- 201110
- 출처
- Ferroelectrics, v.422 no.1, pp.9-13
- ISSN
- 0015-0193
- 출판사
- Gordon and Breach
- 협약과제
- 10MB1400, THz파 발진 변환 검출기 및 신호원, 강광용
- 초록
- We report the complex dielectric characteristics of the Co doped ZnO thin films by terahertz time-domain spectroscopy. The Co doped ZnO thin films are prepared by solgel spin coating process on glass substrate. The crystal structure and morphology of the Zn1-xCoxO films are characterized by high resolution X-ray diffraction and scanning electronmicroscopy, respectively. The Zn1-xCoxOthin film with 10 at.% Co concentration exhibits highly c-axis orientation and the lowest electrical resistivity. The measured THz pulse and the complex dielectric constant of Zn0.8Co0.2O film exhibit different behavior to others due to the decrease of the crystallinity of the film. Copyright © Taylor & Francis Group, LLC.
- KSP 제안 키워드
- CO concentration, Co-doped, Coating process, Complex Dielectric Constant, Crystal structure and morphology, Dielectric characteristics, Doped ZnO, Glass substrate, High-resolution X-ray diffraction, Spin coating, Terahertz frequency