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Journal Article Dielectric characteristics of Co doped ZnO thin films at terahertz frequencies
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Authors
Ki-Chul Kim, Seung Beom Kang, Min Hwan Kwak, Kwang-Yong Kang, Young-Sung Kim
Issue Date
2011-10
Citation
Ferroelectrics, v.422, no.1, pp.9-13
ISSN
0015-0193
Publisher
Gordon and Breach
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1080/00150193.2011.594767
Abstract
We report the complex dielectric characteristics of the Co doped ZnO thin films by terahertz time-domain spectroscopy. The Co doped ZnO thin films are prepared by solgel spin coating process on glass substrate. The crystal structure and morphology of the Zn1-xCoxO films are characterized by high resolution X-ray diffraction and scanning electronmicroscopy, respectively. The Zn1-xCoxOthin film with 10 at.% Co concentration exhibits highly c-axis orientation and the lowest electrical resistivity. The measured THz pulse and the complex dielectric constant of Zn0.8Co0.2O film exhibit different behavior to others due to the decrease of the crystallinity of the film. Copyright © Taylor & Francis Group, LLC.
KSP Keywords
CO concentration, Co-doped, Coating process, Complex Dielectric Constant, Crystal structure and morphology, Dielectric characteristics, Doped ZnO, Glass substrate, High resolution X-ray diffraction, Spin coating, Terahertz frequency