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Dielectric characteristics of Co doped ZnO thin films at terahertz frequencies
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- Authors
- Ki-Chul Kim, Seung Beom Kang, Min Hwan Kwak, Kwang-Yong Kang, Young-Sung Kim
- Issue Date
- 2011-10
- Citation
- Ferroelectrics, v.422, no.1, pp.9-13
- ISSN
- 0015-0193
- Publisher
- Gordon and Breach
- Language
- English
- Type
- Journal Article
- Abstract
- We report the complex dielectric characteristics of the Co doped ZnO thin films by terahertz time-domain spectroscopy. The Co doped ZnO thin films are prepared by solgel spin coating process on glass substrate. The crystal structure and morphology of the Zn1-xCoxO films are characterized by high resolution X-ray diffraction and scanning electronmicroscopy, respectively. The Zn1-xCoxOthin film with 10 at.% Co concentration exhibits highly c-axis orientation and the lowest electrical resistivity. The measured THz pulse and the complex dielectric constant of Zn0.8Co0.2O film exhibit different behavior to others due to the decrease of the crystallinity of the film. Copyright © Taylor & Francis Group, LLC.
- KSP Keywords
- CO concentration, Co-doped, Coating process, Complex Dielectric Constant, Crystal structure and morphology, Dielectric characteristics, Doped ZnO, Glass substrate, High resolution X-ray diffraction, Spin coating, Terahertz frequency