상세정보
학술지
1.55 um Bottom-emitting InAlGaAs VCSELs with Al2O3/a-Si Thin-Film Pairs as Top Mirror
- 발행일
- 200407
- 출처
- Electronics Letters, v.40 no.14, pp.868-869
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 04MB2600, 광엑세스용 광집적 모듈, 오광룡
- 초록
- A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.
- KSP 제안 키워드
- A-Si, Chemical vapour deposition(CVD), Direct modulation, Epitaxial layers, Metal-organic chemical vapour deposition(MOCVD), O 3, output coupler, thin film(TF), vertical-cavity surface-emitting laser(VCSEL)