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Journal Article
1.55 um Bottom-emitting InAlGaAs VCSELs with Al2O3/a-Si Thin-Film Pairs as Top Mirror
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- Authors
- H.-W. Song, W.S. Han, J.-H. Kim, O.-K. Kwon, Y.-G. Ju, J.-H. Lee, S.-H. KoPark, S.-G. Kang
- Issue Date
- 2004-07
- Citation
- Electronics Letters, v.40, no.14, pp.868-869
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Project Code
- 04MB2600, Photonic device integrated module for optical access network, Oh Kwang Ryong
- Abstract
- A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.
- KSP Keywords
- A-Si, Chemical vapour deposition(CVD), Direct modulation, Epitaxial layer, Metal-organic chemical vapour deposition(MOCVD), O 3, output coupler, thin film(TF), vertical-cavity surface-emitting laser(VCSEL)