상세정보
학술지
Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications
- 발행일
- 200410
- 출처
- ETRI Journal, v.26 no.5, pp.475-480
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 03MB2500, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 μm at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.
- KSP 제안 키워드
- Group III elements, Growth behavior, Laser applications, Material system, Molecular beam epitaxy(MBE), Photoluminescence (PL) spectroscopy, Quantum Dot(QD), Room-temperature, Self-assembled InAs quantum dots, Solid-source molecular beam epitaxy, long wavelength