BROWSE
Detail
Journal Article
Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications
- Authors
- Jin Soo Kim, Jin Hong Lee, Sung Ui Hong, Ho Sang Kwack, Chul Wook Lee, Dae Kon Oh
- Issue Date
- 2004-10
- Citation
- ETRI Journal, v.26, no.5, pp.475-480
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 μm at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.
- KSP Keywords
- Group III elements, Growth behavior, Laser applications, Material system, Molecular beam epitaxy(MBE), Photoluminescence (PL) spectroscopy, Quantum Dot(QD), Room-temperature, Self-assembled InAs quantum dots, Solid-source molecular beam epitaxy, long wavelength