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Conference Paper
Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance
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- Authors
- C. G. Ahn, W. J. Cho, K. J. Im, J. H. Yang, I. B. Baek, S. K. Baek, S. J. Lee
- Issue Date
- 2004-10
- Citation
- International SOI Conference 2004, pp.207-208
- Language
- English
- Type
- Conference Paper
- Abstract
- We introduce a novel ultra-thin body (UTB) SOI MOSFET with a recessed source-drain (S/D) structure to solve the high source-drain extension (SDE) external resistance problem. Fabricated devices with 30 nm gate length and 5 nm channel are characterized. By the device simulation, we have shown that devices with a recessed S/D structure have a better electrical properties than those with a elevated S/D structure.
- KSP Keywords
- 5 nm, Device Simulation, Elevated S/D, External resistance, SOI MOSFET, Source/drain extension, electrical properties(I-V curve), gate length, ultra-thin body(UTB)