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Journal Article
Study of the Electroless Deposition of Ni for Betavoltaic Battery Using PN Junction without Seed Layer
- Authors
- Jin Joo Kim, Young Rang Uhm, Byoung Gun Choi, Kwang Jae Son
- Issue Date
- 2015-10
- Citation
- Journal of Nanomaterials, v.2015, pp.1-6
- ISSN
- 1687-4110
- Publisher
- Hindawi Publishing
- Language
- English
- Type
- Journal Article
- Abstract
- The method and conditions of Ni plating were optimized to maximize the output of a betavoltaic battery using radioactive 63Ni. The difference of the short circuit currents between the pre-and postdeposition of 63Ni on the PN junction was 90 nA at the I-V characteristics. It is suspected that the beta rays emitted from 63Ni did not deeply penetrate into the PN junction due to a Ni seed layer with a thickness of 500 횇. To increase the penetration of the beta rays, electroless Ni plating was carried out on the PN junction without a seed layer. To establish the electroless coating conditions for 63Ni, nonradioactive Ni was deposited onto a Si wafer without flaws on the surface. This process can be applied for electroless Ni plating on a PN junction semiconductor using radioactive 63Ni in further studies.
- KSP Keywords
- Electroless Ni plating, Electroless coating, Electroless deposition, I-V characteristic(Transport property), Initialization Vector(IV), P-N junction, Seed layer, Short-Circuit Current, Si wafer
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
