14PS5800, Development of fundamental technologies for semipermanently self-rechargeable 10 mWh/cm2-level all solid and isotope hybrid battery,
Park Kyung Hwan
Abstract
The method and conditions of Ni plating were optimized to maximize the output of a betavoltaic battery using radioactive 63Ni. The difference of the short circuit currents between the pre-and postdeposition of 63Ni on the PN junction was 90 nA at the I-V characteristics. It is suspected that the beta rays emitted from 63Ni did not deeply penetrate into the PN junction due to a Ni seed layer with a thickness of 500 횇. To increase the penetration of the beta rays, electroless Ni plating was carried out on the PN junction without a seed layer. To establish the electroless coating conditions for 63Ni, nonradioactive Ni was deposited onto a Si wafer without flaws on the surface. This process can be applied for electroless Ni plating on a PN junction semiconductor using radioactive 63Ni in further studies.
KSP Keywords
Electroless Ni plating, Electroless coating, Electroless deposition, I-V characteristic(Transport property), Initialization Vector(IV), P-N junction, Seed layer, Short-Circuit Current, Si wafer
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