BROWSE
Detail
Journal Article
A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC
- Authors
- Won So Son, Sang Gi Kim, Young Ho Sohn, Sie Young Choi
- Issue Date
- 2004-02
- Citation
- ETRI Journal, v.26, no.1, pp.7-12
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and 18.8 m廓쨌cm2 with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at Vgs=5 V and Vds=20 V is 16 mA with a gate width of 150 μm.