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Detail
Journal Article
Single-Electron Pass-Transistor Logic with Multiple Tunnel Junctions and Its Hybrid Circuit with MOSFETs
- Authors
- Young Kyun Cho, Yoon Ha Jeong
- Issue Date
- 2004-12
- Citation
- ETRI Journal, v.26, no.6, pp.669-672
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters Cg=C T=Cclk=1 aF, RT=5 M, Vclk=40 mV, and Vin=20 mV. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.