상세정보
학술지
Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array
- 발행일
- 201103
- 출처
- IEEE Electron Device Letters, v.32 no.3, pp.324-326
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- 초록
- A new ferroelectric memory array on a glass substrate has been developed using InGaZnO (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200 °C . The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the 1 and 0 states is about 10-4. © 2006 IEEE.
- KSP 제안 키워드
- Current ratio, Disturb-free, Glass substrate, IGZO TFTs, Memory Array, Thin-Film Transistor(TFT), VDF-TrFE, dielectric layer, fabrication process, ferroelectric memory, gate dielectric