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Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array
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- Authors
- Byeong Hoon Kim, Chun Won Byun, Sung-Min Yoon, Shin Hyuk Yang, Soon-Won Jung, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Kyoung-Ik Cho, Oh-Sang Kwon, Eun-Suk Park, Him Chan Oh, Kyoung-Hwan Kim, Kee Chan Park
- Issue Date
- 2011-03
- Citation
- IEEE Electron Device Letters, v.32, no.3, pp.324-326
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A new ferroelectric memory array on a glass substrate has been developed using InGaZnO (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200 °C . The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the 1 and 0 states is about 10-4. © 2006 IEEE.
- KSP Keywords
- Current ratio, Disturb-free, Fabrication process, Glass substrate, IGZO TFTs, Memory Array, Thin-Film Transistor(TFT), VDF-TrFE(PZT/P), Vinylidene fluoride(VDF), dielectric layer, ferroelectric memory