상세정보
학술지
Structural and Luminescence Characteristics of Post-Annealed ZnO Films on Si (111) in H2O Ambient
- 저자
- 이주영, 김홍승, 장지호, 양민, 안형수, 류상욱
- 발행일
- 200501
- 출처
- Japanese Journal of Applied Physics, v.44 no.1-7, pp.L205-L207
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 05MB1200, 나노급 상변화 정보저장기술 개발, 유병곤
- 초록
- This letter reports the effects of post thermal annealing in H 2O on the structural and optical properties of Zinc oxide (ZnO) films deposited on Si substrate. The properties were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) measurements. Our experiments demonstrated that ZnO films have better crystal quality at high annealing temperatures and there are no emission peaks even at the visible region of ZnO films annealed at 900°C. After annealing at 900°C, however, the surface roughness was increased, which seems to have been caused by re-evaporation, and the thick SiO2 and Zn-Si-O mixed layer was formed between the ZnO film and the Si substrate. © 2005 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Annealing temperature, Applied physics, Atomic force microscope(AFM), Atomic force microscopy (afm), Luminescence characteristics, Mixed layer, No emission, Post-annealed, Post-thermal annealing, Si substrate, Surface roughness