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Structural and Luminescence Characteristics of Post-Annealed ZnO Films on Si (111) in H2O Ambient
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- Authors
- Ju Young Lee, Hong Seung Kim, Ji Ho Chang, Min Yang, Hyong Su Aan, Sang Ouk Ryu
- Issue Date
- 2005-01
- Citation
- Japanese Journal of Applied Physics, v.44, no.1-7, pp.L205-L207
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- This letter reports the effects of post thermal annealing in H 2O on the structural and optical properties of Zinc oxide (ZnO) films deposited on Si substrate. The properties were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) measurements. Our experiments demonstrated that ZnO films have better crystal quality at high annealing temperatures and there are no emission peaks even at the visible region of ZnO films annealed at 900°C. After annealing at 900°C, however, the surface roughness was increased, which seems to have been caused by re-evaporation, and the thick SiO2 and Zn-Si-O mixed layer was formed between the ZnO film and the Si substrate. © 2005 The Japan Society of Applied Physics.
- KSP Keywords
- Annealing temperature, Applied physics, Atomic force microscope(AFM), Atomic force microscopy (afm), Luminescence characteristics, Mixed layer, No emission, Post-annealed, Si substrate, Surface roughness, Visible region