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Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance
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- Authors
- Shinhyuk Yang, Jun Yong Bak, Sung-Min Yoon, Min Ki Ryu, Himchan Oh, Chi-Sun Hwang, Gi Heon Kim, Sang-Hee Ko Park, Jin Jang
- Issue Date
- 2011-12
- Citation
- IEEE Electron Device Letters, v.32, no.12, pp.1692-1694
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- In-Ga-Zn-O thin-film transistors processed at 150 { \circ}C} on laminated polyethylene naphthalate substrates exhibiting high electrical performances such as a saturation mobility of 24.26 cm/(V s}), a subthreshold slope of 140 mV/dec, a turn-on voltage V\rm on of -0.41 V, and an on-off ratio of 1.8 \times 10}9 were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C. © 2006 IEEE.
- KSP Keywords
- Annealing time, High electrical performance, In-Ga-Zn-O, ON/OFF ratio, Plastic substrate, Polyethylene naphthalate, Saturation mobility, Stability characteristics, Subthreshold slope(SS), Thin-Film Transistor(TFT), Turn-on voltage