상세정보
학술지
Low-Temperature Processed Flexible In-Ga-Zn-O Thin Film Transistors Exhibiting High Electrical Performance
- 발행일
- 201112
- 출처
- IEEE Electron Device Letters, v.32 no.12, pp.1692-1694
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- 초록
- In-Ga-Zn-O thin-film transistors processed at 150 { \circ}C} on laminated polyethylene naphthalate substrates exhibiting high electrical performances such as a saturation mobility of 24.26 cm/(V s}), a subthreshold slope of 140 mV/dec, a turn-on voltage V\rm on of -0.41 V, and an on-off ratio of 1.8 \times 10}9 were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C. © 2006 IEEE.
- KSP 제안 키워드
- Annealing time, Gate bias stress, High electrical performance, In-Ga-Zn-O(IGZO), Low temperature(LT), Plastic substrate, Polyethylene naphthalate, Saturation mobility, Stability characteristics, Subthreshold slope(SS), Thin-Film Transistor(TFT)