상세정보
학술지
Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
- 발행일
- 200502
- 출처
- ETRI Journal, v.27 no.1, pp.118-121
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 04MB2400, Flexible 디스플레이 (차세대 디스플레이 기술 개발), 강광용
- 초록
- Silicon dioxide (SiO2) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of 100 to 250°C, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO2 films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO2 film grown at 250°C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.
- KSP 제안 키워드
- Deposition temperature, Dielectric Constant, Electron traps, Film density, Growth rate, Leakage current, Low temperature(LT), Plasma-enhanced atomic layer deposition, Self-limiting, Silicon dioxide, growth temperature