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Detail
Journal Article
Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
- Authors
- Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
- Issue Date
- 2005-02
- Citation
- ETRI Journal, v.27, no.1, pp.118-121
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- Silicon dioxide (SiO2) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of 100 to 250°C, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO2 films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO2 film grown at 250°C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.
- KSP Keywords
- Deposition temperature, Dielectric Constant, Electron traps, Film density, Growth Rate, Growth temperature, Leakage Current, Low-temperature growth, Plasma-enhanced atomic layer deposition, Self-limiting, Silicon dioxide