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Journal Article High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology
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Authors
Changhun Yun, Minseok Kim, Seung Won Lee, Hanul Moon, Sunmin Park, Jae Bon Koo, Jeong Won Kim, In-Kyu You, Seunghyup Yoo
Issue Date
2011-10
Citation
IEEE Electron Device Letters, v.32, no.10, pp.1454-1456
ISSN
0741-3106
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LED.2011.2162483
Project Code
11MC2500, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, Chae Jong- Suk
Abstract
A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 μm are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes. © 2011 IEEE.
KSP Keywords
Bottom contact, Channel Length, High performance, Jet printing, Organic vapor, Pentacene layer, Pentacene thin-film transistors, Printing process, Printing technology, Source/drain electrodes, Thin-Film Transistor(TFT)