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Journal Article
An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator
- Authors
- Young Gi Kim, Chang Woo Kim, Seong Il Kim, Byoung Gue Min, Jong Min Lee, Kyung Ho Lee
- Issue Date
- 2005-02
- Citation
- ETRI Journal, v.27, no.1, pp.75-80
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a micro-strip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a 0.8 mm × 0.8 mm die area.
- KSP Keywords
- 39 GHz, 70 GHz, Carbon-doped, Frequency tuning range, Fully integrated, GaAs heterojunction bipolar transistor, GaAs process, Heterojunction Bipolar Transistors(HBTs), InGaP/GaAs heterojunction, Low phase noise, Microstrip Line