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Ultrathin Film Encapsulation of an OLED by ALD
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- Issue Date
- 2005-02
- Citation
- Electrochemical and Solid-State Letters, v.8, no.2, pp.21-23
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- Fabrication of barrier layers on a PES film and an organic light emitting diode (OLED) based on a glass substrate by atomic layer deposition (ALD) have been carried out. Deposition of 30 nm of AlOx film on both sides of PES film at 90°C gave film MOCON value of 0.0615 g/m2/day. The passivation performance of the double layer consisting of SiNx deposited by plasma-enhanced chemical vapor deposition and AlOx by ALD on the OLED has been investigated using the OLED based on a glass substrate. Preliminary life time of two pairs of double layer coated OLED to 65% of initial luminance was 600 h at the initial luminance of 1200cd/m2. © 2005 The Electrochemical Society. All rights reserved.
- KSP Keywords
- Atomic Layer Deposition, Double layer, Glass substrate, Life time, Plasma-enhanced chemical vapor deposition(PECVD), Ultrathin films, barrier layers, light emitting diodes(LED), organic light emitting diode(OLED)