상세정보
학술지
Indium Tin Oxide Thin Films Grown on Polyethersulphone (PES) Substrates by Pulsed-Laser Deposition for Use in Organic Light-Emitting Diodes
- 발행일
- 200508
- 출처
- ETRI Journal, v.27 no.4, pp.405-410
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 04MF1200, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of 2.9×10-4 ?? cm and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 cd/m2 were 2500 cd/m2 and 2 mA/cm2, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.
- KSP 제안 키워드
- Electro luminescence, External Quantum Efficiency, Field effect transistors(Substrate temperature), ITO thin film, Indium tin oxide thin films, Optical transmittance, Organic light-emitting diodes(OLEDS), Pulsed-laser deposition(PLD), Room-temperature, Surface morphological, Visible range