상세정보
학술지
A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems
- 발행일
- 200504
- 출처
- ETRI Journal, v.27 no.2, pp.133-139
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 03MB1900, 테라비트 통신용 InP RF 집적회로 기술 개발, 주철원
- 초록
- A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 μm gate-length InGaAs/InAIAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.
- KSP 제안 키워드
- 2 mm, 5 GHz, 77 GHz, Automotive radar systems, Conversion gain, Driver Amplifier, Frequency doubler, GHz band, High electron mobility transistor(HEMT), Input power, Microwave monolithic integrated circuits(MMIC)