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Conference Paper MMIC HEMT Switch for Switch Matrix of Satellite Communication System
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Authors
K.K. Ryu, D.H. Shin, I.B. Yom, M.Q. Lee, J.H. Park, S.P. Lee
Issue Date
2005-06
Citation
IEEE MTT-S International Microwave Symposium 2005, pp.2007-2010
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/MWSYM.2005.1517138
Abstract
A MMIC (Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been developed for switch matrix of satellite communication system. This absorptive type MMIC switch has good reflection coefficients performances of input and output ports at both on and off-states. A quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3GHz band to reduce the chip size. The MMIC switch covers the range of 3.2~3.6GHz. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of 1.6mmX1.3mm demonstrates insertion loss below 2dB, isolation above 56.8dB, respectively, and the performance coincides with simulation results. © 2005 IEEE.
KSP Keywords
GHz band, Impedance transformer, MIM capacitor, Microwave monolithic integrated circuits(MMIC), Reflection Coefficient, Switch matrix, input and output, insertion loss, lumped elements, microwave integrated circuit, on-wafer measurement