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학술대회 A 77GHz Automotive Radar MMIC Chip Set Fabricated by a 0.15μm MHEMT Technology
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강동민, 윤형섭, 홍주연, 심재엽, 이경호
IEEE MTT-S International Microwave Symposium 2005, pp.2111-2114
04MB2700, 40G 모듈(테라비트 통신용 InP RF 집적회로 기술개발), 이명현
An MMIC chip set consisting of a power amplifier, a driver amplifier, low noise amplifier, and a frequency doubler has been developed for automotive radar systems at 77GHz. The chip set was fabricated using 0.15μm gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from 76~77GHz with 15.5dBm output power. The chip size is 2mm × 2mm. The driver amplifier exhibited a gain of 23dB over a 76~77 GHz band with an output power of 13dBm. The chip size is 2.1mm × 2mm. The low noise amplifier achieved a gain of 20dB in a band between 76~77GHz with an output power of 10dBm. The chip size is 2.2mm × 2mm. The frequency doubler achieved an output power of -6dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is 1.2mm × 1.2mm. This MMIC chip set is suitable for the 77GHz automotive radar systems and related applications in W-band. © 2005 IEEE.
77GHz, Automotive radar, Driver amplifier, Frequency doubler, Low noise amplifier, MHEMT, MMIC, Power amplifier
KSP 제안 키워드
77 GHz, Automotive radar systems, Conversion gain, Driver Amplifier, Frequency doubler, GHz band, GaAs mHEMT, Input power, Output power, Small signal gain, W-band