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학술지 Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures
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저자
류한열, 심종인, 김철회, 최진형, 정현민, 노민수, 이종무, 남은수
발행일
201112
출처
IEEE Photonics Technology Letters, v.23 no.24, pp.1866-1868
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2011.2170409
협약과제
11MB5800, 6"급 에피웨이퍼 기반 수직형 LED 칩용 Laser Lift-off 장비 개발, 이종무
초록
The authors investigate efficiency and electron leakage characteristics in GaN-based light-emitting diodes (LEDs) without AlGaN electron-blocking-layer (EBL) structures. Both simulation and electroluminescence (EL) measurement results show that the internal quantum efficiency decreases rapidly as the thickness of an undoped GaN interlayer between active layers and a p-GaN layer increases, which is caused by electron leakage from active layers to the p-GaN due to inefficient hole injection. However, photoluminescence (PL) measurement results show that the quality of active layers deteriorates as the interlayer thickness decreases. The EL and PL results imply that the optimization of the undoped GaN interlayer thickness is important for achieving high internal quantum efficiency in AlGaN-EBL-free LEDs. © 2011 IEEE.
키워드
AlGaN, electron blocking layer (EBL), InGaN, light-emitting diode (LED)
KSP 제안 키워드
Active Layer, Electron blocking layer(EBL), GaN-Based, Interlayer thickness, Internal quantum efficiency, Layer structure, Leakage characteristics, Light-emitting diodes (leds), electron leakage, hole injection, measurement results